To92 Mosfet

Type Designator: 2N7000

To92 P Channel Mosfet
To92 Logic Level Mosfet
To92 P Channel Mosfet
To92 Mosfet

To92: rjk5002dje n mosfet 1.5 500 30 1.2 150 12.5 21 5 to92: ssn1n45b n mosfet 0.9 450 50 0.5 150 4.25 to92: ut2n10 n mosfet 25 100 10 2 150 15 80 1.05 to252 to92 to92nl: vn0106n3 n mosfet 1 60 2.4 2 5 20 3 to92: vn0109n3 n mosfet 1 90 2.4 2 5 20 3 to92: vn2106 n mosfet 1 60 20 2.4 0.6 150 5 13 4 to92: vn2210n3 n mosfet 1 100 20 2.4 1.2 150 10. Through Hole TO-92-3 MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for Through Hole TO-92-3 MOSFET.

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 18 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 0.35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 1.4 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO92

2N7000 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7000 Datasheet (PDF)

0.1. 2n7000p.pdf Size:184K _1

0.2. 2n7000r3.pdf Size:77K _motorola

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7000/DTMOS FET Transistor2N7000N Channel EnhancementMotorola Preferred Device3 DRAIN2GATE1 SOURCEMAXIMUM RATINGS

0.3. 2n7000-03.pdf Size:274K _philips

2N7000N-channel enhancement mode field-effect transistorRev. 03 19 May 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:2N7000 in SOT54 (TO-92 variant).2. Features TrenchMOS technology Very fast switching Logic level compatible.3. Applications Relay

0.4. 2n7000 2n7002.pdf Size:626K _st

2N70002N7002N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID32N7000 60 V

0.5. 2n7000bu.pdf Size:85K _fairchild_semi

Advanced Small Signal MOSFET 2N7000BU/2N7000TAFEATURESBVDSS = 60 Vn Fast Switching TimesRDS(on) = 5.0 n Improved Inductive Ruggednessn Lower Input CapacitanceID = 200 mAn Extended Safe Operating Arean Improved High Temperature ReliabilityTO-921.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Contin

0.6. 2n7000 2n7002 nds7002a.pdf Size:109K _fairchild_semi

November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesHigh density cell design for low RDS(ON).These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,Voltage controlled small signal switch.DMOS technology. These products have been designed toRugged

0.7. 2n7000ta.pdf Size:84K _fairchild_semi

0.8. 2n7000.pdf Size:94K _fairchild_semi

0.9. 2n7000.pdf Size:443K _samsung

To92 P Channel Mosfet

N-CHANNEL SmaII SignaI MOSFETFEATURESBVDSS = 60 V Fast Switching TimesRDS(on) = 5.0 Improved Inductive Ruggedness Lower Input CapacitanceID = 200 mA Extended Safe Operating Area Improved High Temperature ReliabilityTO-921231.Source 2. Gate 3. DrainAbsolute Maximum RatingsSymbol Characteristic Value UnitsVDSS Drain-to-Source Voltage V60Continuous Drain Cur

0.10. 2n7000kl bs170kl.pdf Size:93K _vishay

2N7000KL/BS170KLVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) () VGS(th) (V) ID (A)Pb-free ESD Protected: 2000 VAvailable2 at VGS = 10 V0.4760 1.0 to 2.5 RoHS*APPLICATIONSCOMPLIANT4 at VGS = 4.5 V0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays,

0.11. 2n7000 2n7002 vq1000j-p bs170.pdf Size:58K _vishay

2N7000/2N7002, VQ1000J/P, BS170Vishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)5 @ VGS = 10 V 0.8 to 3 0.22N70002N7002 7.5 @ VGS = 10 V 1 to 2.5 0.11560VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225BS170 5 @ VGS = 10 V 0.8 to 3 0.5FEATURES BENEFITS APPLICATIONSD

0.12. 2n7000g 2n7000rlra 2n7000rlrag 2n7000rlrmg 2n7000rlrpg.pdf Size:88K _onsemi

2N7000GSmall Signal MOSFET200 mAmps, 60 VoltsN-Channel TO-92Featureshttp://onsemi.com AEC Qualified200 mAMPS PPAP Capable60 VOLTS This is a Pb-Free Device*RDS(on) = 5 WN-ChannelMAXIMUM RATINGS DRating Symbol Value UnitDrain Source Voltage VDSS 60 VdcDrain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcGGate-Source Voltage- Continuous VGS 20 VdcS- No

0.13. 2n7000g.pdf Size:92K _onsemi

0.14. 2n7000z.pdf Size:150K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is p

0.15. 2n7000.pdf Size:355K _utc

UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product isTO-92particularly suited for low vo

To92 Logic Level Mosfet

0.16. 2n7000k.pdf Size:201K _auk

2N7000KN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on)

0.17. 2n7000csm.pdf Size:28K _semelab

2N7000CSMMECHANICAL DATADimensions in mm (inches)NCHANNELENHANCEMENT MODEMOS TRANSISTOR0.51 0.10(0.02 0.004) 0.31rad.(0.012)3FEATURES V(BR)DSS = 60V21 RDS(ON) = 51.91 0.10(0.075 0.004)A0.31rad.(0.012)3.05 0.13 ID = 200mA(0.12 0.005)1.40(0.055)1.02 0.10 Hermetic Ceramic Surface Mount max.A =(0.04

0.18. 2n7000.pdf Size:358K _secos

2N7000200mA,60V,RDS(ON) 6Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductTO-92 DDescriptionES1The 2N7000 is designed for high voltage, highspeed applications such as switching regulators,converters, solenoid and relay drives. b1SEATING PLANECe1beDrainMillimeter MillimeterREF. REF. Min. Max. Min. Max. Gat

0.19. tsm2n7000kct.pdf Size:181K _taiwansemi

TSM2N7000K 60V N-Channel MOSFET TO-92 Pin Definition: PRODUCT SUMMARY 1. Source VDS (V) RDS(on)() ID (mA) 2. Gate 3. Drain 5 @ VGS = 10V 100 60 5.5 @ VGS = 5V 100 Features Block Diagram Low On-Resistance ESD Protection High Speed Switching Low Voltage Drive Ordering Information Part No. Package Packing TSM2N7000KCT B0 TO-92 1Kpcs / Bulk

0.20. tsm2n7000.pdf Size:85K _taiwansemi

0.21. 2n7000.pdf Size:531K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate MOSFETS TO-92 2N7000 MOSFET (N-Channel) 1. SOURCE FEATURES High density cell design for low RDS(ON) 2. GATE Voltage controlled small signal switch 3. DRAIN Rugged and reliable High saturation current capability MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value

0.22. 2n7000k.pdf Size:67K _kec

2N7000KSEMICONDUCTORN Channel MOSFETTECHNICAL DATAESD Protected 2000VINTERFACE AND SWITCHING APPLICATION. B CFEATURESESD Protected 2000V.High density cell design for low RDS(ON).Voltage controlled small signal switch.N DIM MILLIMETERSRugged and reliable.A 4.70 MAXEKB 4.80 MAXHigh saturation current capablity. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H

0.23. 2n7000a.pdf Size:61K _kec

2N7000ASEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controolled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85

0.24. 2n7000.pdf Size:63K _kec

2N7000SEMICONDUCTORN CHANNEL ENHANCEMENT MODETECHNICAL DATAFIELD EFFECT TRANSISTORINTERFACE AND SWITCHING APPLICATION. B CFEATURESHigh density cell design for low RDS(ON).Voltage controlled small signal switch.Rugged and reliable.N DIM MILLIMETERSHigh saturation current capablity.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RA

0.25. 2n7000.pdf Size:239K _lge

2N7000 Mosfet (N-Channel)TO-921. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V Dimensions in inches and (millimeters)ID Drain Curr

0.26. 2n7000.pdf Size:168K _wietron

WEITRON2N7000Small Signal MOSFETN-Channel3 DRAINTO-92Features:21*Low On-Resistance : 5 GATE 1. SOURCE 23*Low Input Capacitance: 60PF 2. GATE3. DRAIN*Low Out put Capacitance : 25PF1SOURCE*Low Threshole :1.4V(TYE)*Fast Switching Speed : 10nsMaximum Ratings (TA=25 C Unless Otherwise Specified)Rating Symbol Value UnitDrain-Source Voltage VDS 60 VGate-S

0.27. h2n7000.pdf Size:51K _hsmc

Spec. No. : HE6267HI-SINCERITYIssued Date : 1993.09.17Revised Date : 2006.08.10MICROELECTRONICS CORP.Page No. : 1/5H2N7000N-Channel Enhancement Mode TransistorDescriptionThe H2N7000 is designed for high voltage, high speed applications such as switchingregulators, converters, solenoid and relay drivers.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temp

0.28. st2n7000.pdf Size:566K _semtech

ST 2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel DrainGateSource1. Source 2.Gate 3.DrainTO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain-Gate Voltage (RGS = 1 M) VDGR 60 VGate-source Voltage Continuous VGS 20 V VGSM 40 V Non-repetitive ( tp 50 s)Drain Current Continuous

0.29. h2n7000.pdf Size:423K _shantou-huashan

H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor General Description These products have been designed to minimize on-state resistance While TO-92 provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, pow

0.30. 2n7000.pdf Size:199K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor 2N7000FEATURESWith TO-92 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2N6967JANTX, 2N6967JANTXV, 2N6968, 2N6968JANTX, 2N6968JANTXV, 2N6969, 2N6969JANTX, 2N6969JANTXV, IRF630, 2N7000P, 2N7001, 2N7002, 2N7002L, 2N7004, 2N7005, 2N7006, 2N7007.

LIST

Last Update

To92 P Channel Mosfet

Transistor Outline Package

TO-92 Terminal identification
The pinout is as shown to the right.
Not all transistors use this pin out,
see the pic of the transistor below.
The United States uses this type or pin out.
Some japanese BJTs use the other style pin out.
Check the data sheet to confirm the pin out.
It's common for devices to switch pin function.
Normally dash numbers changes when pins move.

FETs may also be found in this package.
Of course FETs having their own pin out.

TO-92 Plastic Body

TO-92 is a through-hole device in a plastic case.
Terminal identification [BJT]; Pin 1 Emitter, Pin 2 Base, Pin 3 Collector.
Terminal identification [Shunt Regulator]; Pin 1 Reference, Pin 2 Anode, Pin 3 Cathode.
Note the location of the flat portion of the case to the pins.

Press-fit Aluminum heat sinks are available for the TO-92 case.
The heat sinks are either slip-on of clip-on heat sinks,
and are some what large compared to the size of the TO-92 body.
The size of the heat sink has a lot to do with the TO-92's plastic body.

The generic dimensions of the TO-92 package include the following:
Body width; 4.58mm +0.25, -0.15mm. Body height; 4.58mm +/-0.20mm.
Lead length 14.47mm +/-0.40mm. Lead width 0.46mm +/-0.10mm.
Lead spacing; 1.27 +/- 0.20mm, 1.02mm from the flat face of the component.

To92 Mosfet

Types of Transistor cases; Transistor and FET Packages.
Manufacturers of FETs and BJTs [Transistor Manufacturers]
How to Derate Transistors [Design Guidelines].

Commercial part numbers using a TO-92 package; BC556, BC557, BC558, BC559, BC560, BC171. A TL431 shunt regulator in a TO-92 .
No MIL spec parts use the TO-92 Transistor because of the plastic package.
No derating curve is listed for a transistor in a TO-92 package.
As a general rule military specifications will define metal or ceramic parts and components.

Note that the leads may come straight or ordered [purchased] formed or bent as shown in the BC171 picture to the left.

Many common parts use this package, including; 2N3904, MPS2222, 2N4401 and MPF102 transistors. Note that the 2N2222 is known as the MPS2222A, or PN2222 in this package [among other names].

Editor note; Any time a commercial part number is provided as a device using a particular package, that part number is just an example. As the same part [perhaps with a slightly different part number] may also be available in a completely different package. For instance the generic part, 2N2222, may also be purchased as a SOT-23 [as MMBT2222A] or SOT-223 [as PZT2222] package.

TO-92 Plastic Body TL-431